The development of semiconductors is a key technology behind making electric vehicles more efficient. As such, Mitsubishi Electric Corporation, has announced that it will acquire buildings and land from Sharp Fukuyama Semiconductor in Fukuyama, Hiroshima Prefecture, Japan to expand its production of semiconductor componentry.
The acquired properties, which is a three-story building with 46,500m2 of floor space, will serve as a new site where Mitsubishi Electric’s Power Device Works will process wafers for the manufacture of power semiconductors. New production facilities scheduled to start up in November of next year will enable Mitsubishi Electric to expand its power device business.
The demand for power semiconductors needed to control electric power with efficiency is rapidly rising in parallel with efforts to conserve energy and protect the global environment through carbon-reduction measures, including the ongoing electrification of automobiles worldwide.
To meet this growing demand, Mitsubishi Electric conducted a search for potential new manufacturing sites. As a result, the company has reached an agreement with Sharp Corporation to acquire buildings and land from Sharp Fukuyama Semiconductor.