Onsemi and GlobalFoundries announced a collaboration to develop 650V gallium nitride power devices using 200mm GaN-on-silicon technology. The partnership targets EVs as well as AI data centers and aerospace applications, with customer sampling planned for first half 2026.
Onsemi and GlobalFoundries have announced a collaboration agreement to develop and manufacture next-generation gallium nitride power devices, marking an expansion of Onsemi’s intelligent power capabilities. The partnership will focus initially on 650V devices using GlobalFoundries’ 200mm enhancement-mode GaN-on-silicon process technology.
The collaboration combines GlobalFoundries’ manufacturing platform with Onsemi’s silicon drivers, controllers, and thermally enhanced packaging to create power devices designed for applications where high power density is required within constrained physical spaces. Target markets include automotive systems, AI data centers, industrial equipment, and aerospace and defense sectors.
According to Dinesh Ramanathan, Senior Vice President of Corporate Strategy at Onsemi, the partnership leverages the strengths of both companies. “This collaboration brings together Onsemi’s system and product expertise with GlobalFoundries’ advanced GaN process to deliver new 650V power devices for high-growth markets,” Ramanathan said. He added that when paired with the company’s silicon drivers and controllers, the GaN products will enable customers to build smaller and more efficient power systems for various applications.
Mike Hogan, Chief Business Officer at GlobalFoundries, emphasized the strategic importance of the collaboration. “By combining our 200mm GaN-on-Si platform and U.S.-based manufacturing with Onsemi’s deep system and product expertise, we’re accelerating high-efficiency solutions and building resilient supply chains for data centers, automotive, industrial, aerospace and defense, and other critical markets.”
The technology will address specific applications including power supplies and DC-DC converters for AI data centers, onboard chargers and DC-DC converters for EVs, solar microinverters, ESSs, and motor drives for industrial and aerospace applications.
The collaboration expands Onsemi’s power semiconductor portfolio to include a range of GaN technologies spanning low, medium, and high voltage lateral GaN to ultra high-voltage vertical GaN. The company indicated this breadth enables system designers to develop power architectures that deliver increased power output within reduced physical footprints.
GaN technology offers several technical advantages, including higher frequency operation that allows for reduced component count and system size, bidirectional capability that can replace multiple traditional transistors, and integrated functionality combining multiple components in a single package.
Onsemi plans to begin providing samples to customers in the first half of 2026, with volume production to follow.
